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Verilog for lsfr over bist
4.5
When desgin memories with larg portion, which include
capacitance over bit-lines. The two bit-line are used perform a read and write
operation, due to operation of discharging a capacitance in write operation. 7T
SRAM cell reduces the activity factor of discharging the bit line pair to
perform a write operation. 7T SRAM cell reduces the activity factor of
discharging the bit line pair to perform a write operation.
GOKUL446524 0 0
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Verilog for booth multiplier
4.0
We are going to propose a new SRAM bitcell for the
purpose of less power consumption, read stability,less area than the existing
Schmitt trigger based SRAM and other existing designs through a new design
which is combined of virtual grounding with Read error reduction logic.
Adjustable Hysteresis CMOS schmitt triggers
Hysteresis CMOS Schmitt trigger design strategies are
investigated to voltage controlled current sinking and/or sourcing transistors,
the hysteresis window can be easily moved wi
GOKUL446524 0 0
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