Verilog for lsfr over bist
2016-08-23
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When desgin memories with larg portion, which include capacitance over bit-lines. The two bit-line are used perform a read and write operation, due to operation of discharging a capacitance in write operation. 7T SRAM cell reduces the activity factor of discharging the bit line pair to perform a write operation. 7T SRAM cell reduces the activity factor of discharging the bit line pair to perform a write operation.
verilog
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